The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Sep. 15, 2003
Stephen E. Derenzo, Pinole, CA (US);
Edith Bourret-courchesne, Richmond, CA (US);
Marvin J. Weber, Danville, CA (US);
Mattias K. Klintenberg, Berkeley, CA (US);
Stephen E. Derenzo, Pinole, CA (US);
Edith Bourret-Courchesne, Richmond, CA (US);
Marvin J. Weber, Danville, CA (US);
Mattias K. Klintenberg, Berkeley, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.