Silicon carbide single crystal and method and apparatus for producing the same

Abstract

A method of producing a silicon carbide single crystal in which a sublimation raw materialis accommodated at the side of vessel bodyin a graphite crucibleplacing a seed crystal of a silicon carbide single crystal at the side of cover bodyof the graphite cruciblethe sublimation raw materialis sublimated by a first induction heating coilplaced at the side of sublimation raw materiala re-crystallization atmosphere is form by a second induction heating coilplaced at the side of cover bodyso that the sublimation raw materialsublimated by the first induction heating coilis re-crystallizable only in the vicinity of the seed crystal of a silicon carbide single crystal, and the sublimation raw materialis re-crystallized on the seed crystal of a silicon carbide single crystal, and a silicon carbide single crystalis grown while keeping the whole surface of its growth surface in convex shape through the all growth processes. A high quality silicon carbide single crystal with large diameter excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, suitable for electronic and optical devices and the like, and showing no contamination of polycrystals and polymorphs, no defect of micropipes and the like can be produced efficiently without cracking and the like.