The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2006

Filed:

Sep. 22, 2003
Applicants:

Masaki Mizutani, Nara, JP;

Takehiko Yoshino, Nara, JP;

Shoji Nishida, Nara, JP;

Inventors:

Masaki Mizutani, Nara, JP;

Takehiko Yoshino, Nara, JP;

Shoji Nishida, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are kept afloat on the surface of a flowing solution for liquid-phase epitaxy which comprises a crystallizing material dissolved in a solvent in a supersaturated state and which is flowing in a solution flow passage, and while said plurality of substrates being moved by virtue of said flowing solution in said solution flow passage, a crystal film is grown on the surfaces of said plurality of substrates which are in contact with said flowing solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.


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