The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Sep. 09, 2004
Hyun-cheol Shin, Suwon-si, KR;
Jeong-seok Lee, Anyang-si, KR;
Ho-in Kim, Yongin-si, KR;
In-kuk Yun, Suwon-si, KR;
Seung-woo Kim, Anyang-si, KR;
Seong-taek Hwang, Pyeongtaek-si, KR;
Hyun-Cheol Shin, Suwon-si, KR;
Jeong-Seok Lee, Anyang-si, KR;
Ho-In Kim, Yongin-si, KR;
In-Kuk Yun, Suwon-si, KR;
Seung-Woo Kim, Anyang-si, KR;
Seong-Taek Hwang, Pyeongtaek-si, KR;
Samsung Electronics CO LTD, Suwon-si, KR;
Abstract
A reflective semiconductor optical amplifier includes a substrate, a waveguide with a buried heterostructure formed by sequentially laminating a lower cladding, an active layer, and an upper cladding on the substrate, the waveguide including, sequentially, respective straight line, curved and tapered waveguide regions. A current blocking layer surrounds the waveguide to prevent electric current from flowing outside the active layer. Selectively etching portions of the current blocking layer and the substrate around the waveguide forms a trench to reduce parasitic capacitance. Further features include a window region on one end of the tapered waveguide region, an anti-reflection surface on one end of the window region, and a high-reflection surface on one end of the straight line waveguide region.