The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Apr. 06, 2004
Hiroshi Yamauchi, Fukuyama, JP;
Hiroshi Yamauchi, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An object of the present invention is to provide a highly sensitive semiconductor light receiving device wherein the efficiency of light convergence into the light receiving region has been increased. The semiconductor light receiving device includes a light receiving region formed on a semiconductor substrate, and an electrode formed in a peripheral portion of the light receiving region on the semiconductor substrate for transferring a charge generated through photoelectric conversion in the light receiving region to the outside of the light receiving region, wherein a part of or the entirety of the peripheral portion of the electrode is processed so as to recede toward the center of the electrode as the electrode is away from the semiconductor substrate. In addition, two types of etching of isotropic etching and anisotropic etching are used at the time of the pattern formation of the electrode at least once, respectively.