The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2006

Filed:

Apr. 11, 2003
Applicants:

Michiel Jos Van Duuren, Leuven, BE;

Robertus Theodorus Fransiscus Van Schaijk, Leuven, BE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method to improve the coupling ratio between a control gate () and a floating gate () of a floating gate non-volatile semiconductor device is described. In a stacked gate floating gate transistor according to the invention, a conductive spacer () is used at both sides of the stack. The conductive spacer () is galvanically connected to the control gate (), preferably by means of a conductive layer (), whereas it is separated from the floating gate () by means of an insulating layer (). The capacitance (C, C) between both conductive spacers () and the side walls of the floating gate () adds up to the normal capacitance between control gate () and floating gate ().


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