The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Dec. 01, 2004
Yukio Tamai, Fukuyama, JP;
Nobuyoshi Awaya, Tenri, JP;
Shinji Kobayashi, Nara, JP;
Hidechika Kawazoe, Kitakatsuragi-gun, JP;
Toshimasa Suzuki, Takasaki, JP;
Hidetoshi Masuda, Takasaki, JP;
Naoto Hagiwara, Gumma-gun, JP;
Yuji Matsushita, Takasaki, JP;
Yuji Nishi, Gumma-gun, JP;
Yukio Tamai, Fukuyama, JP;
Nobuyoshi Awaya, Tenri, JP;
Shinji Kobayashi, Nara, JP;
Hidechika Kawazoe, Kitakatsuragi-gun, JP;
Toshimasa Suzuki, Takasaki, JP;
Hidetoshi Masuda, Takasaki, JP;
Naoto Hagiwara, Gumma-gun, JP;
Yuji Matsushita, Takasaki, JP;
Yuji Nishi, Gumma-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.