The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Apr. 05, 2004
Yushi Jinno, Gifu, JP;
Shiro Nakanishi, Ogaki, JP;
Kyoko Hirai, Hashima, JP;
Tsutomu Yamada, Ogaki, JP;
Yoshihiro Morimoto, Inazawa, JP;
Kiyoshi Yoneda, Gifu, JP;
Yushi Jinno, Gifu, JP;
Shiro Nakanishi, Ogaki, JP;
Kyoko Hirai, Hashima, JP;
Tsutomu Yamada, Ogaki, JP;
Yoshihiro Morimoto, Inazawa, JP;
Kiyoshi Yoneda, Gifu, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film () to 5×10atoms/cmat most but also to prevent crystallization of the a-Si film () being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film () covered with an interlayer insulation film () in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film () efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.