The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Jun. 27, 2003
Kanakasabapathi Subramanian, Albany, NY (US);
Xiaojun T. Huang, Ithaca, NY (US);
Noel C. Macdonald, Santa Barbara, CA (US);
Kanakasabapathi Subramanian, Albany, NY (US);
Xiaojun T. Huang, Ithaca, NY (US);
Noel C. MacDonald, Santa Barbara, CA (US);
Cornell Research Foundation, Inc., Ithaca, NY (US);
Abstract
Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.