The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Jul. 22, 2004
Applicants:
Hideaki Machida, Yamanashi, JP;
Yoshio Ohshita, Aichi, JP;
Masato Ishikawa, Yamanashi, JP;
Takeshi Kada, Yamanashi, JP;
Inventors:
Hideaki Machida, Yamanashi, JP;
Yoshio Ohshita, Aichi, JP;
Masato Ishikawa, Yamanashi, JP;
Takeshi Kada, Yamanashi, JP;
Assignee:
Tri Chemical Laboratores Inc., Kitatsuru-Gun, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: