The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Dec. 18, 2003
Young Gi Kim, Daejeon, KR;
Sang Ho Woo, Kyoungki-do, KR;
Seung Won Choi, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Disclosed is a method for fabricating a semiconductor device by using a PECYCLE-CVD process. The method includes the steps of feeding source gas into a process chamber for predetermined time within one cycle, allowing reaction gas to flow in the process chamber at least until a plasma reaction is finished in the process chamber and feeding purge gas into the process chamber for a predetermined time within one cycle, thereby purging residual products remaining in the process chamber after source gas is reacted, forming plasma in the process chamber for a predetermined time within one cycle so as to allow reaction gas to react with plasma, thereby depositing a thin film on a wafer, and feeding purge gas into the process chamber for a predetermined time within one cycle, thereby purging residual products remaining in the process chamber after reaction gas is reacted. Superior step-coverage and uniformity of the thin film are achieved while depositing the thin film at a higher speed.