The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Feb. 22, 2005
Yoshio Kasai, Oita, JP;
Miki Kawase, Tokyo, JP;
Takashi Suzuki, Yokohama, JP;
Motoya Kishida, Yokohama, JP;
Yoshio Kasai, Oita, JP;
Miki Kawase, Tokyo, JP;
Takashi Suzuki, Yokohama, JP;
Motoya Kishida, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device, which comprises forming a first semiconductor film on a surface of a semiconductor substrate, adsorbing a first impurity on a surface of the first semiconductor film, adsorbing a second impurity on the surface of the first semiconductor film, forming a second semiconductor film on the surface of the first semiconductor film, and solid-phase-diffusing the first impurity and the second impurity into a region of the semiconductor substrate which is located adjacent to the first and second semiconductor films to thereby form a first diffusion region containing the first impurity and a second diffusion region containing the second impurity, a concentration of the first impurity in the first diffusion region being higher than that of the second impurity in the second diffusion region, and the first diffusion region having the bottom thereof covered by the second diffusion region.