The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
May. 17, 2005
Eun Suk Lee, Seoul, KR;
Eun Suk Lee, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
Disclosed are a chain gate line structure of a semiconductor device, and a method for manufacturing the same. The semiconductor device having a gate line structure comprises device isolation films formed on a semiconductor substrate for defining active regions and inactive regions; stack type gate electrodes formed on top of the active regions of the semiconductor substrate; at least one layer of an interlayer insulating film formed on the entire surface of the resultant material having the stack type gate electrodes; gate contacts formed on contact holes of the interlayer insulating film and connected to the stack type gate electrodes; and chain type gate lines for connecting the gate contacts formed in the active regions arrayed in a row among a plurality of active regions on the top of the interlayer insulating film in a concave-convex type chain structure. The chain gate line structure can enlarge active regions of a cell in a longitudinal axis direction by changing gate lines of the cell from a serial array into a chain line structure by having stack type gate electrodes and chain type gate lines connected thereto, and accordingly can reduce the contact resistance of the cell.