The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2006

Filed:

Dec. 16, 2003
Applicants:

Jeong-hee Lee, Gyeonggi-do, KR;

Hang-woo Lee, Gyeonggi-do, KR;

Shang-hyeun Park, Chungcheongnam-do, KR;

You-jong Kim, Seoul, KR;

Inventors:

Jeong-Hee Lee, Gyeonggi-do, KR;

Hang-Woo Lee, Gyeonggi-do, KR;

Shang-Hyeun Park, Chungcheongnam-do, KR;

You-Jong Kim, Seoul, KR;

Assignee:

Samsung SDI Co., Ltd., Suwon-Si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A substrate, a cathode electrode formed on the substrate, a gate insulating layer which is formed on the cathode electrode and has a through hole corresponding to part of the cathode electrode, a gate electrode which has a gate hole corresponding to the through hole and is formed on the gate insulating layer, and an emitter formed on the gate electrode exposed to the bottom of the through hole. The emitter has a stack structure formed of a resistive material layer and an electron emission material layer containing a fine electron emission source formed on the resistive material layer.


Find Patent Forward Citations

Loading…