The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Mar. 01, 2004
Applicants:
Young-nam Hwang, Hwaseong-gun, KR;
Ki-nam Kim, Anyang, KR;
Su-jin Ahn, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase-change memory device includes a phase-change memory cell having a volume of material which is programmable between amorphous and crystalline states. A write current source selectively applies a first write current pulse to program the phase-change memory cell into the amorphous state and a second write current pulse to program the phase-change memory cell into the crystalline state. The phase-change memory device further includes a restore circuit which selectively applies the first current pulse to the phase-change memory cell to restore at least an amorphous state of the phase-change memory cell.