The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

Dec. 05, 2001
Applicants:

Visvamohan Yegnashankaran, Redwood City, CA (US);

Gobi R. Padmanabhan, Sunnyvale, CA (US);

Inventors:

Visvamohan Yegnashankaran, Redwood City, CA (US);

Gobi R. Padmanabhan, Sunnyvale, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

The capacitance of a multilevel metal interconnect formed on a semiconductor substrate can be adjusted, and thereby optimized, to respond to signals from devices that are formed on the underlying substrate by forming capacitive structures in trenches which have been formed using the top metal layer as a mask.


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