The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Dec. 20, 2004
Young-tae Kim, Gyeonggi-do, KR;
Young-nam Hwang, Gyeonggi-do, KR;
Tai-kyung Kim, Gyeonggi-do, KR;
Won-young Chung, Gyeonggi-do, KR;
Keun-ho Lee, Seoul, KR;
Young-tae Kim, Gyeonggi-do, KR;
Young-nam Hwang, Gyeonggi-do, KR;
Tai-kyung Kim, Gyeonggi-do, KR;
Won-young Chung, Gyeonggi-do, KR;
Keun-ho Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.