The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

Aug. 07, 2003
Applicants:

Jessy Bustos, Le Touvet, FR;

Philippe Coronel, Barraux, FR;

Christophe Regnier, Saint Hilaire du Touvet, FR;

François Wacquant, Saint Ismier, FR;

Brice Tavel, Grenoble, FR;

Thomas Skotnicki, Crolles, FR;

Inventors:

Jessy Bustos, Le Touvet, FR;

Philippe Coronel, Barraux, FR;

Christophe Regnier, Saint Hilaire du Touvet, FR;

François Wacquant, Saint Ismier, FR;

Brice Tavel, Grenoble, FR;

Thomas Skotnicki, Crolles, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process for producing an electronic component includes covering a substrate with a portion defining, with the substrate, a volume at least partly filled with a temporary material. The temporary material is then removed via chimney for access to said volume. A deposition of a fill material is then made in said volume, the fill material being obtained from precursors supplied via the chimney. The process is particularly suitable for producing a gate of an MOS-type transistor. In this case, the fill material is conducting or semiconducting, and an electrically insulating coating material may also be deposited in said volume before the (semi) conducting fill material. The process also includes defining a trench in a substrate filled with a temporary material. The filled trench is then covered with a circuit portion. The temporary material is then removed via a chimney for access to the trench. A deposition of low dielectric fill material is then made in the trench.


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