The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Apr. 21, 2004
Yasuhiro Kunitsugu, Tokyo, JP;
Hiromasu Matsuoka, Itami, JP;
Yasuyuki Nakagawa, Tokyo, JP;
Harumi Nishiguchi, Tokyo, JP;
Yasuhiro Kunitsugu, Tokyo, JP;
Hiromasu Matsuoka, Itami, JP;
Yasuyuki Nakagawa, Tokyo, JP;
Harumi Nishiguchi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (TaO) and another film of a dielectric oxide, such as aluminum oxide (AlO), and silicon oxide (SiO). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.