The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2006

Filed:

May. 13, 2004
Applicants:

Franz Ungar, Munich, DE;

Gunter Schmid, Hemhofen, DE;

Inventors:

Franz Ungar, Munich, DE;

Gunter Schmid, Hemhofen, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure is directed to a semiconductor chip having protection against focused ion beam (FIB) attack. The semiconductor chip includes a conductor structure connected to a dielectric material, which has the property of giving rise, when ions are introduced, to an electrical conductivity which is sufficient for circuit-related connection of the conductors. When such a dielectric material is irradiated with ions, its electrical conductivity increases so that the electronic circuit integrated in the chip registers the electrical connection generated in this way between the conductors adjoining the dielectric material. Organic materials having a π-system are suitable for use as the dielectric material.


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