The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Dec. 11, 2003
Tomoyoshi Kushida, Seto, JP;
Tomoyoshi Kushida, Seto, JP;
Toyota Jidosha Kabushiki Kaisha, Aichi-ken, JP;
Abstract
An object of this invention is to provide a buried gate-type semiconductor device in which its gate interval is minimized so as to improve channel concentration thereby realizing low ON-resistance, voltage-resistance depression due to convergence of electrical fields in the vicinity of the bottom of the gate is prevented and further prevention of voltage-resistance depression and OFF characteristic are achieved at the same time. A plurality of gate electrodeseach having a rectangular section are disposed in its plan section. The intervalT between the long sides of the gate electrodesis made shorter than the intervalS between the short sides thereof. Further, a belt-like contact openingis provided between the short sides of the gate electrode, so that Psource regionand Nsource regionare in contact with a source electrode. Consequently, the intervalT between the long sides of the gate electrodecan be set up regardless of the width of the contact opening