The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Nov. 23, 2004
Takashi Ishigaki, Kanagawa, JP;
Takaki Niwa, Kanagawa, JP;
Naoto Kurosawa, Kanagawa, JP;
Hidenori Shimawaki, Tokyo, JP;
Takashi Ishigaki, Kanagawa, JP;
Takaki Niwa, Kanagawa, JP;
Naoto Kurosawa, Kanagawa, JP;
Hidenori Shimawaki, Tokyo, JP;
NEC Compound Semiconductor Devices, Ltd., Kawasaki, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer, which are sequentially laminated on a substrate. It also includes an emitter electrode, a base electrode, and a collector electrode, which are respectively formed on the emitter cap layer, the base layer, and the sub-collector layer. The sub-collector layer is made up of a first sub-collector layer adjacent to the substrate and a second sub-collector layer adjacent to the collector layer. In the area between adjacent device elements, the first sub-collector layer has an element insulating region created by ion implantation, and the second sub-collector layer has a recess-shaped element insulating region.