The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2006

Filed:

Feb. 23, 2004
Applicants:

Tomonobu Tsuchiya, Hachioji, JP;

Tsukuru Ohtoshi, Hanno, JP;

Inventors:

Tomonobu Tsuchiya, Hachioji, JP;

Tsukuru Ohtoshi, Hanno, JP;

Assignees:

Hitachi, Ltd., Tokyo, JP;

Opnext Japan, Inc., Kanagawa, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/328 (2006.01); H01L 31/336 (2006.01); H01L 31/72 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract

An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A semiconductor optical device and an optical module including a package substrate and a semiconductor optical device mounted on the package substrate are provided, whereby there are realized the improvement of device properties and the long-term reliability through the use of an Al composition ratio-reduced tensile strained quantum well layer.


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