The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Oct. 08, 2003
Applicant:
Geon-ook Park, Seoul, KR;
Inventor:
Geon-Ook Park, Seoul, KR;
Assignee:
DongbuAnam Semiconductor Inc., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device includes forming a barrier layer on an individual device formed on a semiconductor substrate and including a MOS transistor. An ozone process is performed on the barrier layer. A pre-metal dielectric (I'MD) layer is then formed on the barrier layer.