The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Aug. 10, 2004
Applicants:
Jung-wook Kim, Gyeonggi-do, KR;
Hyeon-deok Lee, Seoul, KR;
In-sun Park, Gyeonggi-do, KR;
Ji-soon Park, Gyeonggi-do, KR;
Inventors:
Jung-Wook Kim, Gyeonggi-do, KR;
Hyeon-Deok Lee, Seoul, KR;
In-Sun Park, Gyeonggi-do, KR;
Ji-Soon Park, Gyeonggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.