The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Oct. 10, 2003
Applicants:
Vladislav Vashchenko, Palo Alto, CA (US);
Andy Strachan, Santa Clara, CA (US);
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Inventors:
Vladislav Vashchenko, Palo Alto, CA (US);
Andy Strachan, Santa Clara, CA (US);
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/38 (2006.01);
U.S. Cl.
CPC ...
Abstract
In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by making use of varying size and spacings to the perforations in the mask. The diffusion of dopant is completed by making use of an annealing stage.