The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Jul. 14, 2004
Peter M. Fryer, Yorktown Heights, NY (US);
Robert L. Wisnieff, Ridgefield, CT (US);
Takatoshi Tsujimura, Fujisawa, JP;
Peter M. Fryer, Yorktown Heights, NY (US);
Robert L. Wisnieff, Ridgefield, CT (US);
Takatoshi Tsujimura, Fujisawa, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodesanddisposed at a specified interval above an insulating substrateand formed by printing-and-plating; an a-Si filmdisposed for the source and drain electrodesand; a gate insulating filmlaminated on the a-Si film; and a gate electrodelaminated on the gate insulating filmand formed by printing-and-plating. The a-Si filmand the gate insulating filmhave an offset regionthat uniformly extends beyond the dimensions of the gate electrode