The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Jan. 06, 2004
Young Tae Byun, Gyeonggi-do, KR;
Hwa Sun Park, Seoul, KR;
Seok Lee, Seoul, KR;
Deok Ha Woo, Seoul, KR;
Jong Chang Yi, Seoul, KR;
Young Tae Byun, Gyeonggi-do, KR;
Hwa Sun Park, Seoul, KR;
Seok Lee, Seoul, KR;
Deok Ha Woo, Seoul, KR;
Jong Chang Yi, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
A fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. It relates to a P-p-n-N InGaAsP/InP ridge waveguide phase modulator fabricated to be that the phase change of the TE-mode is linearly proportional to the reverse bias voltage at 1.55 μm wavelength. A method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N-InP substrate; forming a first waveguide layer of n-InGaAsP and a second waveguide layer of p-InGaAsP in sequence on the first cladding layer; forming a second cladding layer of P-InP and a third cladding layer of P-InP in sequence on the second waveguide layer; and forming an electrode layer of pInGaAs on the third cladding layer.