Advanced wafer planarizing

Abstract

An apparatus for planarizing is disclosed. A method of planarizing is disclosed. Methods of planarizing using frictional planarizing, chemical planarizing, tribochemical planarizing, CVD planarizing, and electrochemical planarizing and combinations thereof are disclosed. A planarizing chamber can be used. New methods of control are planarizing disclosed. The new planarizing methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture parameters are used for control. Methods to determine preferred changes to process control parameters are disclosed. Cost of manufacture models can be used and are disclosed. Process models can be used and are disclosed. A method to use business calculations combined with physical measurements to improve control is discussed. Use of business calculations to change the cost of finishing semiconductor wafers is discussed. The method can help cost of manufacture forecasting for pre-ramp-up, ramp-up, and commercial manufacture. Activity based accounting can be preferred for some applications. Planarizing fluids are preferred. Reactive planarizing aids are preferred. Electro-planarizing for adding and removing material is disclosed. New methods and new apparatus for non-steady state planarizing control are disclosed.