The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Nov. 22, 2002
Sining Mao, Savage, MN (US);
Eric Shane Linville, Chanhassen, MN (US);
Zheng Gao, Savage, MN (US);
Brian William Karr, Savage, MN (US);
Janusz Jozef Nowak, Edina, MN (US);
Olle Gunnar Heinonen, Eden Prairie, MN (US);
Sining Mao, Savage, MN (US);
Eric Shane Linville, Chanhassen, MN (US);
Zheng Gao, Savage, MN (US);
Brian William Karr, Savage, MN (US);
Janusz Jozef Nowak, Edina, MN (US);
Olle Gunnar Heinonen, Eden Prairie, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
The present invention provides a tunneling magneto-resistive read sensor structure that improves sensitivity and linear density of the sensor structure. The sensor includes first and second electrodes and a stack positioned between the electrodes. The stack includes first and second free layers with magnetization orientations that are biased relative to each other. A tunneling barrier (insulating layer) or non-magnetic metal spacer is positioned between the first and second free layers. A sense current is passed between the first and second free layers of the stack. The amount of current passing through the first and second free layer changes based upon the orientation of the first and second free layers relative to each other.