The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Jul. 08, 2004
Hiroki Yamashita, Hachioji, JP;
Akio Koyama, Oume, JP;
Tatsuhiro Aida, Hino, JP;
Atsushi Itoh, Fussa, JP;
Masahito Sonehara, Koganei, JP;
Hiroki Yamashita, Hachioji, JP;
Akio Koyama, Oume, JP;
Tatsuhiro Aida, Hino, JP;
Atsushi Itoh, Fussa, JP;
Masahito Sonehara, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The power supply-voltage dependency of a current source current is reduced and the power supply voltage is lowered. The invention includes an emitter-coupled logic circuitand a reference-voltage generating circuitfor generating a reference voltage VCSC for controlling a drain current (=current source current ICS) of a constant current-supplying n-type MOS transistorThe emitter-coupled logic circuitcomprises a current switch made up of a pair of emitter-coupled bipolar transistorsanda constant current-supplying n-type MOS transistorthat is connected in series with the current switch, and resistor meansandconnected in series with the bipolar transistorsandindividually for obtaining an output voltage. The reference-voltage generating circuitcomprises an n-type MOS transistora bipolar transistorwhich determines the drain voltage of the n-type MOS transistorand a control circuitfor controlling the drain current of the n-type MOS transistor