The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Dec. 12, 2003
Tatsundo Kawai, Kanagawa, JP;
Koichi Suzuki, Kanagawa, JP;
Hiroshi Tanabe, Kanagawa, JP;
Keiji Okinaka, Kanagawa, JP;
Naoki Yamada, Tokyo, JP;
Chika Negishi, Kanagawa, JP;
Akihito Saito, Kanagawa, JP;
Maki Okajima, Tokyo, JP;
Tatsundo Kawai, Kanagawa, JP;
Koichi Suzuki, Kanagawa, JP;
Hiroshi Tanabe, Kanagawa, JP;
Keiji Okinaka, Kanagawa, JP;
Naoki Yamada, Tokyo, JP;
Chika Negishi, Kanagawa, JP;
Akihito Saito, Kanagawa, JP;
Maki Okajima, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
There is provided an organic light emitting device to break through the limit of 25% of internal quantum efficiency and 5% of external quantum efficiency while using singlet luminescence. Specifically provided is an organic light emitting device comprising an anode, an organic layer and a cathode, wherein light-emitting molecules present in an emissive layer which is at least a part of the organic layer and responsible for luminescence by charge injection effect transition from a triplet excited state having an energy level higher than a lowest excited singlet state to a singlet excited state and effect fluorescent emission in a fluorescence quantum yield of 60% or more in the same state as existing in the emissive layer, and wherein the emissive layer comprises the light-emitting molecules as a main component in an amount of 50 wt % or more, or is doped with the light-emitting molecules at a high concentration of 7 wt % or more, or is a layer in which the light-emitting molecules are excitable by direct trapping of electrons and holes has enabled to break through the limit of 25% of internal quantum efficiency and 5% of external quantum efficiency while using singlet luminescence.