The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Sep. 30, 2004
Tetsuya Okada, Kumagaya, JP;
Hiroaki Saito, Ota, JP;
Tetsuya Okada, Kumagaya, JP;
Hiroaki Saito, Ota, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A Schottky barrier diode in which a p-type semiconductor layer is provided in an n-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n-type semiconductor layer having a low resistivity is laminated on a first n-type semiconductor layer capable of securing a specified breakdown voltage. P-type semiconductor regions are made to have depths equal to or slightly deeper than the second n-type semiconductor layer. By this, in a Schottky barrier diode in which leak current IR can be suppressed by pinch off of a depletion layer, the forward voltage VF can be reduced and the specified breakdown voltage can be secured.