The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Apr. 14, 2003
Keisuke Miyazaki, Ikoma, JP;
Kazuhiko Wada, Yamatokooriyama, JP;
Taiji Morimoto, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An AlGaAs-based semiconductor laseris formed on an n-type GaAs substrateand thereafter etching is carried out until reaching an n-type AlGaAs clad layerfrom the surface. Next, the n-type AlGaAs clad layeris removed by etching with an etchant having selectivity to GaAs. Subsequently, the surface of an n-type GaAs buffer layeris lightly etched. Thus, the n-type GaAs buffer layerof the AlGaAs-based semiconductor laseris left in a slightly abraded state on the n-type GaAs substratemaintaining the flatness of the groundwork layer during growing an AlGaInP-based semiconductor laserat the second time. Therefore, the flatness of the crystals of, in particular, an active layer grown at the second time can be improved, and the poor characteristics of the AlGaInP-based semiconductor laserattributed to the poor flatness of the groundwork can be improved.