The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2006

Filed:

Jan. 27, 2004
Applicants:

James Stasiak, Lebanon, OR (US);

Kevin F Peters, Corvallis, OR (US);

Jennifer Wu, Corvallis, OR (US);

Pavel Kornilovich, Corvallis, OR (US);

Yong Chen, Sherman Oaks, CA (US);

Inventors:

James Stasiak, Lebanon, OR (US);

Kevin F Peters, Corvallis, OR (US);

Jennifer Wu, Corvallis, OR (US);

Pavel Kornilovich, Corvallis, OR (US);

Yong Chen, Sherman Oaks, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device including a substrate, and multiple self-alignednano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.


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