The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Aug. 17, 2004
Hiizu Ohtorii, Kanagawa, JP;
Kaori Tai, Kanagawa, JP;
Hiroshi Horikoshi, Kanagawa, JP;
Naoki Komai, Kanagawa, JP;
Shuzo Sato, Kanagawa, JP;
Hiizu Ohtorii, Kanagawa, JP;
Kaori Tai, Kanagawa, JP;
Hiroshi Horikoshi, Kanagawa, JP;
Naoki Komai, Kanagawa, JP;
Shuzo Sato, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.