Shallow junction semiconductor and method for the fabrication thereof

Abstract

A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A super-saturated doped source silicide metallic layer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide metallic layer incorporates a substantially uniformly distributed dopant therein in a substantially uniform super-saturated concentration. The silicide metallic layer is reacted with the semiconductor substrate therebeneath to form a salicide layer and outdiffuse the dopant from the salicide layer into the semiconductor substrate therebeneath. The outdiffused dopant in the semiconductor substrate is then activated to form a shallow source/drain junction beneath the salicide layer. An interlayer dielectric is then deposited above the semiconductor substrate, and contacts are formed in the interlayer dielectric to the salicide layer.