The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Sep. 23, 2004
Shih-chang Chang, Hsinchu, TW;
De-hua Deng, Taoyuan, TW;
Yaw-ming Tsai, Taichung, TW;
Abstract
A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.