The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2006

Filed:

Jun. 09, 2004
Applicants:

Amol Kalburge, Irvine, CA (US);

Kevin Q. Yin, Irvine, CA (US);

Inventors:

Amol Kalburge, Irvine, CA (US);

Kevin Q. Yin, Irvine, CA (US);

Assignee:

Newport Fab, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8222 (2006.01); H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a first link spacer and a second link spacer situated on the top surface of the base. The bipolar transistor further comprises a sacrificial post situated between the first and second link spacers, where the first and second link spacers have a height that is substantially less than a height of the sacrificial post. The bipolar transistor also comprises a conformal layer situated over the sacrificial post and the first and second link spacers. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the first and second link spacers, the sacrificial post, and the base. The sacrificial planarizing layer may comprise, for example, an organic material such as an organic BARC ('bottom anti-reflective coating').


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