The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Oct. 29, 2002
Applicants:
Shigeru Sawada, Itami, JP;
Takashi Iwasaki, Itami, JP;
Inventors:
Shigeru Sawada, Itami, JP;
Takashi Iwasaki, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method for non-invasively profiling carrier concentration in In-containing compound semiconductor wafers that enables employing the profiled wafers themselves in semiconductor device applications. The method, which using the C/V technique profiles carrier concentration in wafers including an In-containing-compound semiconductor surface layer, is characterized in non-invasively profiling carrier concentration by contacting a liquid electrode on the wafer surface, and without using photo-etching, employing an applied voltage that is up to a voltage surpassing 10V.