The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2006

Filed:

Oct. 12, 2004
Applicants:

Jae-chang Jung, Seoul, KR;

Keun Kyu Kong, Gyunggi-Do, KR;

Seok-kyun Kim, Gyunggi-Do, KR;

Inventors:

Jae-chang Jung, Seoul, KR;

Keun Kyu Kong, Gyunggi-Do, KR;

Seok-kyun Kim, Gyunggi-Do, KR;

Assignee:

Hynix Semiconductor Inc., Kyungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 1/73 (2006.01); G03C 1/835 (2006.01); G03F 7/20 (2006.01); G03F 7/36 (2006.01); C08F 34/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused reflection of lower film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.


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