The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
May. 08, 2003
Rod Taylor, Ottawa, CA;
Cyril Hnatovsky, Ottawa, CA;
Paul Corkum, Gloucester, CA;
David Rayner, Ottawa, CA;
Ravi Bhardwaj, Ottawa, CA;
Rod Taylor, Ottawa, CA;
Cyril Hnatovsky, Ottawa, CA;
Paul Corkum, Gloucester, CA;
David Rayner, Ottawa, CA;
Ravi Bhardwaj, Ottawa, CA;
National Research Council of Canada, Ottawa, CA;
Abstract
A sub-micron structure is fabricated in a transparent dielectric material by focusing femtosecond laser pulses into the dielectric to create a highly tapered modified zone with modified etch properties. The dielectric material is then selectively etched into the modified zone from the direction of the narrow end of the tapered zone so that as the selective etching proceeds longitudinally into the modified zone, the progressively increasing width of the modified zone compensates for lateral etching occurring closer to the narrow end so as to produce steep-walled holes. The unetched portion of the modified zone produced by translating the laser beam close to and parallel to the bottom surface of the dielectric can serve as an optical waveguide to collect light from or deliver light to the etched channel which can contain various biological, optical, or chemical materials for sensing applications.