The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Sep. 09, 2003
Sriram Satakopan, Sunnyvale, CA (US);
Arvindvel Shanmugavel, Mountain View, CA (US);
Shunjiang Xu, Sunnyvale, CA (US);
Von-kyoung Kim, Santa Clara, CA (US);
Peter Lai, San Jose, CA (US);
Sriram Satakopan, Sunnyvale, CA (US);
Arvindvel Shanmugavel, Mountain View, CA (US);
Shunjiang Xu, Sunnyvale, CA (US);
Von-Kyoung Kim, Santa Clara, CA (US);
Peter Lai, San Jose, CA (US);
Sun Microsystems, Inc., Santa Clara, CA (US);
Abstract
A technique improves the performance of an integrated circuit design by selectively replacing low Vtransistors with standard Vtransistors. The selection of gates for replacement may be based on a multi-path timing analysis. If a low Vvariant of a gate instance increases a path cycle time as compared to a standard Vcounterpart, the maximum of the path cycle times for all paths that include the low Vvariant and the maximum of the path cycle time for these paths with a standard Vvariant are calculated. If the maximum path cycle time for the path including the low Vvariant is greater than the maximum path cycle time for the path including the standard Vvariant, then that low Vvariant is substituted with a standard Vvariant. Thus, integrated circuit designs prepared in accordance with the invention may exhibit improved cycle times.