The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Dec. 17, 2002
W. Eugene Hill, Moss Beach, CA (US);
W. Eugene Hill, Moss Beach, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method and apparatus for calibrating failures in semiconductor memory devices due to contact mask misalignment includes: providing a plurality of semiconductor memory devices on a die; providing a contact mask with a plurality of known offsets; creating a plurality of contacts on the die using the contact mask; determining which devices on the die fail; and creating a pass/fail map for the devices. The pass/fail map can be used to determine the range of allowed misalignment and the amount of misalignment, providing a better understanding of how contact mask misalignment affects the yield and reliability of the memory devices. The pass/fail map may also be used for comparison with a pass/fail map created after the arrays have been subjected to a known stress.