The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Nov. 13, 2000
Mamoru Shinohara, Tokyo, JP;
Mamoru Shinohara, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor apparatus, which comprises: a substrate having a transistor; a first electrode formed on the substrate and connected to the transistor; a second electrode formed on the substrate and electrically separated from the first electrode; and an insulating film formed on the substrate so as to cover the first electrode, wherein, when a plane of the insulating film which is not on a side of the substrate is taken as a first plane, a surface facing the first plane of the first electrode is taken as a first surface, and a surface facing the first plane of the second electrode is taken as a second surface, a distance between a surface of the substrate and the second surface is larger than a distance between the surface of the substrate and the first surface. By virtue of having the above unique structure, the semiconductor apparatus of the present invention is advantageous in that, when a finger or any other material which is electrostatically charged is brought closer to the substrate, the static electricity is not discharged into the electrode but into the static-electricity drawing wiring and then drawn out of the semiconductor device, so that the semiconductor devices, the circuits and the like which are connected to the electrode can be prevented from suffering a damage due to the static electricity and from losing the functions thereof.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile