The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2006

Filed:

Apr. 24, 2003
Applicants:

Yukihisa Yoshida, Tokyo, JP;

Tamotsu Nishino, Tokyo, JP;

Yoshiyuki Suehiro, Tokyo, JP;

Sangseok Lee, Tokyo, JP;

Kenichi Miyaguchi, Tokyo, JP;

Jiwei Jiao, Tokyo, JP;

Inventors:

Yukihisa Yoshida, Tokyo, JP;

Tamotsu Nishino, Tokyo, JP;

Yoshiyuki Suehiro, Tokyo, JP;

Sangseok Lee, Tokyo, JP;

Kenichi Miyaguchi, Tokyo, JP;

Jiwei Jiao, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a high frequency apparatus for transmitting or processing a high frequency signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The high frequency apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.


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