The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Apr. 07, 2004
Seiki Goto, Tokyo, JP;
Yoshinobu Sasaki, Tokyo, JP;
Seiki Goto, Tokyo, JP;
Yoshinobu Sasaki, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a high-frequency power amplifier, gate feed portions are formed by dividing a gate feed which connects transistor gate electrodes in parallel, and each of the gate feed portions includes a given number of gate electrodes connected in parallel. Each of transistor cell elements includes a set of the gate electrodes connected in parallel. A resistance wire is interposed between the transistor cell elements to isolate each transistor cell element. The resistance wire and the gate electrodes are made of the same metal material and formed by the same process. Thus, closed loop oscillation of transistors is suppressed with no increase in chip size.