The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Oct. 29, 2003
Motoji Yagura, Tenri, JP;
Motoji Yagura, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A Heterojunction Bipolar Transistor, HBT, () containing a collector layer (), a base layer () and an emitter layer () is constructed such that the collector layer (), the base layer () and the emitter layer () have different lattice constants of a, aand arespectively, and a value of abetween values of aand a(in other words, the values of a, aand asatisfy a relationship of a>a>aor a<a<a). According to the present invention, the HBT having a high reliability can be realized without altering the existing apparatus and steps for producing the HBT extensively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile