The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Aug. 29, 2003
Applicants:
Vesselin K. Vassilev, Plovdiv, BG;
Guido Groeseneken, Leuven, BE;
Inventors:
Vesselin K. Vassilev, Plovdiv, BG;
Guido Groeseneken, Leuven, BE;
Assignee:
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/62 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention is related to an Electrostatic Discharge protection device. This may be a semiconductor device such as a CMOS transistor, having a snap-back IV characteristic, in order to withstand ESD pulses. The device of the invention comprises an additional doped region, which influences the internal resistance of the substrate whereupon the device is built. This has a positive effect on the snap-back characteristic, putting the snap back trigger voltage and current at a lower value, compared to prior art devices.