The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
May. 25, 2004
Carsten Ahrens, München, DE;
Angelika Geiselbrechtinger, Grasbrunn, DE;
Wolfgang Hartung, München, DE;
Christian Herzum, Pöcking, DE;
Reinhard Losehand, München, DE;
Carsten Ahrens, München, DE;
Angelika Geiselbrechtinger, Grasbrunn, DE;
Wolfgang Hartung, München, DE;
Christian Herzum, Pöcking, DE;
Reinhard Losehand, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.